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| NTHD3101F Power MOSFET and Schottky Diode Features -20 V, FETKYt, P-Channel, -4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com MOSFET V(BR)DSS -20 V RDS(on) TYP 64 mW @ -4.5 V 85 mW @ -2.5 V ID MAX -4.4 A * * * * * * * * * * * Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics Independent Pinout to each Device to Ease Circuit Design Trench P-Channel for Low On Resistance Ultra Low VF Schottky Pb-Free Packages are Available Li-Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products SCHOTTKY DIODE VR MAX 20 V S VF TYP 0.510 V A IF MAX 4.1 A Applications MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Pulsed Drain Current Steady State t5s tp = 10 ms IDM TJ, TSTG IS TL Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TJ = 25C TJ = 85C TJ = 25C PD TJ = 25C 2.1 -13 -55 to 150 2.5 260 A C A C Symbol VDSS VGS ID Value -20 8.0 -3.2 -2.3 -4.4 1.1 W Units V V A G D P-Channel MOSFET C Schottky Diode 8 1 ChipFET CASE 1206A STYLE 3 PIN CONNECTIONS 1 8 MARKING DIAGRAM 1 2 3 4 D1 M G 8 7 6 5 A A S 3 2 7 6 C C D D SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Steady State t5s TJ = 25C 4.1 A Symbol VRRM VR IF Value 20 20 2.2 Units V V V G 4 5 D1 = Specific Device Code M = Month Code G = Pb-Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. (c) Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 3 1 Publication Order Number: NTHD3101F/D NTHD3101F THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 2) Junction-to-Ambient - t 10 s (Note 2) Symbol RqJA RqJA Max 113 60 Units C/W C/W 2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On-Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = -4.5, ID = -3.2 A VGS = -2.5, ID = -2.2 A VGS = -1.8, ID = -1.0 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge td(ON) tr td(OFF) tf VSD tRR ta tb QRR Symbol VF IR Test Conditions IF = 0.1 A IF = 1.0 A VR = 10 V VR = 20 V Min VGS = 0 V, IS = -1.0 A , dIS/dt = 100 A/ms VGS = 0 V, IS = -2.5 A TJ = 25C VGS = -4.5 V, VDD = -10 V, ID = -3.2 A, RG = 2.4 W 5.8 11.7 16 12.4 -0.8 13.5 9.5 4.0 6.5 nC -1.2 V ns ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = -4.5 V, VDS = -10 V, ID = -3.2 A VGS = 0 V, f = 1.0 MHz, VDS = -10 V 680 100 70 7.4 0.6 1.4 2.5 nC pF gFS VDS = -10 V, ID = -2.9 A VGS = VDS, ID = -250 mA -0.45 2.7 64 85 120 8.0 80 110 170 S -1.5 V mV/C mW V(BR)DSS V(BR)DSS/TJ IDSS IGSS VDS = -16 V, VGS = 0 V TJ = 25C TJ = 125C VGS = 0 V, ID = -250 mA -20 -15 -1.0 -5.0 100 nA V mV/C mA Symbol Test Conditions Min Typ Max Units VDS = 0 V, VGS = 8.0 V DRAIN-SOURCE DIODE CHARACTERISTICS SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Typ 0.425 0.510 0.575 1.0 5.0 mA Max Units V 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTHD3101F TYPICAL P-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 9 -ID, DRAIN CURRENT (AMPS) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 -1.8 V -1.6 V -1.4 V 7 8 9 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = -5 V to -3.6 V VGS = -3 V -2.6 V TJ = 25C -2.4 V -ID, DRAIN CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 0 TC = -55C 25C 100C VDS -10 V -2.2 V -2 V 3.5 0.5 1 1.5 2 2.5 3 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.2 Figure 2. Transfer Characteristics 0.175 0.15 ID = -3.2 A TJ = 25C TJ = 25C 0.175 0.15 VGS = -2.5 V 0.125 0.1 0.125 0.1 VGS = -4.5 V 0.075 0.05 1 2 3 4 5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 0.075 0.05 2 3 4 5 6 7 8 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.4 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 10 ID = -3.2 A VGS = -4.5 V -IDSS, LEAKAGE (A) 1000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 100C 100 2 4 6 8 10 12 14 16 18 20 -TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTHD3101F TYPICAL P-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS = 0 V CISS TJ = 25C -VGS, GATE-TO-SOURCE VOLTAGE (V) 1500 1200 900 VDS = 0 V 600 300 COSS 0 5 -VGS 0 -VDS 5 10 15 20 CRSS QT 4 -V DS 3 2 1 0 ID = -3.2 A TJ = 25C 0 2 4 6 8 QGS QGD -VGS 8 6 4 2 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 5 10 C, CAPACITANCE (pF) Qg, TOTAL GATE CHARGE (nC) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 -IS, SOURCE CURRENT (AMPS) VDS = -10 V ID = -3.2 A VGS = -4.5 V 100 t, TIME (ns) td(off) tf tr 10 td(on) 5 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 4 3 2 1 0 0.3 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.6 0.9 1.2 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTHD3101F TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1 TJ = 150C 1 TJ = 150C TJ = 25C TJ = -55C 0.40 0.60 0.80 TJ = 25C 0.40 0.60 0.80 0.1 0.20 0.1 0.20 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 11. Typical Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) 1E-3 IR, REVERSE CURRENT (AMPS) 100E-6 TJ = 100C 10E-6 1E-6 TJ = 150C 10E+0 1E+0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 12. Maximum Forward Voltage TJ = 150C TJ = 100C 100E-3 10E-3 1E-3 100E-9 10E-9 0 TJ = 25C TJ = 25C 0 10 VR, REVERSE VOLTAGE (VOLTS) 20 100E-6 10 VR, REVERSE VOLTAGE (VOLTS) 20 Figure 13. Typical Reverse Current PFO, AVERAGE POWER DISSIPATION (WATTS) Figure 14. Maximum Reverse Current IO, AVERAGE FORWARD CURRENT (AMPS) 3.5 3 2.5 2 1.5 1 0.5 0 25 45 dc square wave Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20 freq = 20 kHz 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 square wave Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20 dc 65 85 105 125 145 165 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 15. Current Derating Figure 16. Forward Power Dissipation http://onsemi.com 5 NTHD3101F DEVICE ORDERING INFORMATION Device NTHD3101FT1 NTHD3101FT1G NTHD3101FT3 NTHD3101FT3G Package ChipFET ChipFET (Pb-Free) ChipFET ChipFET (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel 10000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTHD3101F PACKAGE DIMENSIONS ChipFET CASE 1206A-03 ISSUE G L 5 6 3 7 2 8 1 D 8 7 6 5 q HE 1 2 3 4 E 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. DIM A b c D E e e1 L HE q MILLIMETERS NOM MAX 1.05 1.10 0.30 0.35 0.15 0.20 3.05 3.10 1.65 1.70 0.65 BSC 0.55 BSC 0.28 0.35 0.42 1.80 1.90 2.00 5 NOM MIN 1.00 0.25 0.10 2.95 1.55 INCHES NOM 0.041 0.012 0.006 0.120 0.065 0.025 BSC 0.022 BSC 0.011 0.014 0.071 0.075 5 NOM MIN 0.039 0.010 0.004 0.116 0.061 MAX 0.043 0.014 0.008 0.122 0.067 0.017 0.079 e1 e b c STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. A A S G D D C C A 0.05 (0.002) SOLDERING FOOTPRINT* 2.032 0.08 0.711 0.028 1.092 0.043 0.178 0.007 0.457 0.018 0.254 0.010 SCALE 20:1 mm inches 0.66 0.026 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ChipFET is a trademark of Vishay Siliconix. FETKY is a registered trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 NTDH3101F/D |
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